ELECTRONIC-STRUCTURE OF REFRACTORY-METAL SILICIDE THIN-FILMS

被引：17

作者：

AZIZAN, M ^{[1
]}

BAPTIST, R ^{[1
]}

TAN, TAN ^{[1
]}

VEUILLEN, JY ^{[1
]}

机构：

[1] CNRS, ETUD PROPRIETES ELECTR SOLID LAB, F-38042 GRENOBLE, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 38卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90526-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：117 / 124

页数：8

共 17 条

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[2] REACTIVE NB/SI(1 1 1) INTERFACES STUDIED BY ELECTRON-SPECTROSCOPY [J].

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TAN, TAN ;

CINTI, RC ;

CHAUVET, G ;

BAPTIST, R .

SOLID STATE COMMUNICATIONS, 1985, 54 (10) :895-898

[3] SELF-CONSISTENT SEMIRELATIVISTIC ENERGY-BANDS OF WSI2 [J].

BHATTACHARYYA, BK ;

BYLANDER, DM ;

KLEINMAN, L .

PHYSICAL REVIEW B, 1985, 31 (04) :2049-2055

[4] COMPARISON OF FULLY RELATIVISTIC ENERGY-BANDS AND COHESIVE ENERGIES OF MOSI2 AND WSI2 [J].

BHATTACHARYYA, BK ;

BYLANDER, DM ;

KLEINMAN, L .

PHYSICAL REVIEW B, 1985, 32 (12) :7973-7978

[5] FULLY RELATIVISTIC SELF-CONSISTENT ENERGY-BANDS OF WSI2 [J].

BHATTACHARYYA, BK ;

BYLANDER, DM ;

KLEINMAN, L .

PHYSICAL REVIEW B, 1985, 31 (08) :5462-5464

[6] ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES [J].

BISI, O ;

CHIAO, LW .

PHYSICAL REVIEW B, 1982, 25 (08) :4943-4948

[7] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].

Calandra, C. ;

Bisi, O. ;

Ottaviani, G. .

SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364

[8]

LEY L, 1984, SEMICONDUCT SEMIMET, V21, P385

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[10]

NICOLET MA, 1983, VLSI ELECTRONICS

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