LASER-SCANNING PHOTOEMISSION MEASUREMENTS OF SILICON-SILICON DIOXIDE INTERFACE

[1] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[3] FENDLEY JR, 1969, RCA REV, V30, P422

[4] GOLDSBOROUGH JP, 1969, J QUANTUM ELECTRON, VQE5, P133

[5] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3580 - &

[6] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 152 (02): : 785 - +

[7] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 144 (02): : 588 - &

[8] HERNQVIST KG, TO BE PUBLISHED

[9] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[10] ELECTRICAL PULSE BREAKDOWN OF SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2728 - +

[1] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[2] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[3] FENDLEY JR, 1969, RCA REV, V30, P422

[4] GOLDSBOROUGH JP, 1969, J QUANTUM ELECTRON, VQE5, P133

[5] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3580 - &

[6] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 152 (02): : 785 - +

[7] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J]. PHYSICAL REVIEW, 1966, 144 (02): : 588 - &

[8] HERNQVIST KG, TO BE PUBLISHED

[9] AN INVESTIGATION OF INSTABILITY AND CHARGE MOTION IN METAL-SILICON OXIDE-SILICON STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 222 - +

[10] ELECTRICAL PULSE BREAKDOWN OF SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2728 - +