PROPERTIES OF ION-IMPLANTED GAAS DIODES

被引:9
作者
ROUGHAN, PE
MANCHESTER, KE
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D O I
10.1149/1.2411815
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:278 / +
页数:1
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[1]   DOPING OF SILICON BY ION IMPLANTATION [J].
MANCHEST.KE ;
SIBLEY, CB ;
ALTON, G .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :169-&
[2]   IMPLANTATION OF ZINC INTO GALLIUM ARSENIDE [J].
SCHROEDER, JB ;
DIESELMAN, HD .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :125-+