IMPLANTATION OF ZINC INTO GALLIUM ARSENIDE

被引:10
作者
SCHROEDER, JB
DIESELMAN, HD
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 01期
关键词
D O I
10.1109/PROC.1967.5423
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:125 / +
页数:1
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共 11 条
[1]   DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J].
BOWER, RW ;
BARON, R ;
MAYER, JW ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1966, 9 (05) :203-&
[2]   EFFECTS PRODUCED BY THE IONIC BOMBARDMENT OF GERMANIUM [J].
CUSSINS, WD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (04) :213-222
[3]  
FERBER RR, 1963, IEEE T NUCL SCI, V10, P15
[4]   IMPLANTATION PROFILES FOR 40KEV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (TEMPERATURE DEPENDENCE CHANNELING E/T) [J].
GIBBONS, JF ;
ELHOSHY, A ;
MANCHESTER, KE ;
VOGEL, FL .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :46-+
[5]   PHOTOELECTRIC PROPERTIES OF IONICALLY BOMBARDED SILICON [J].
KINGSBURY, EF ;
OHL, RS .
BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (04) :802-815
[6]   DOPING OF SILICON BY ION IMPLANTATION [J].
MANCHEST.KE ;
SIBLEY, CB ;
ALTON, G .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :169-&
[7]  
MANCHESTER KE, 1966, T METALL SOC AIME, V236, P379
[8]   SILICON HEAVILY DOPED BY ENERGETIC CESIUM IONS [J].
MCCALDIN, JO ;
WIDMER, AE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) :1073-&
[9]   ALKALI ION DOPING OF SILICON [J].
MCCALDIN, JO ;
WIDMER, AE .
PROCEEDINGS OF THE IEEE, 1964, 52 (03) :301-&
[10]   PROPERTIES OF IONIC BOMBARDED SILICON [J].
OHL, RS .
BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (01) :104-121