PROJECTED FREQUENCY LIMITS OF GAAS-MESFETS

被引：13

作者：

GOLIO, JM

GOLIO, JRJ

机构：

[1] Motorola Government Electronics Group, Chandler

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 01期

关键词：

D O I：

10.1109/22.64619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Limits to the ultimate frequency performance which can be realized with GaAs MESFET's have been projected. These predictions are based on the reported performance of 137 devices fabricated between 1966 and 1988 and on first-order modeling. The predictions indicate that ultimate maximum frequency of oscillation values may approach 700 GHz while gain-bandwidth product values as high as 200 GHz may be realized.

引用

页码：142 / 146

页数：5

共 5 条

[1] BURIED-CHANNEL GAAS-MESFETS WITH FREQUENCY-INDEPENDENT OUTPUT CONDUCTANCE [J].