ULTIMATE SCALING LIMITS FOR HIGH-FREQUENCY GAAS-MESFETS

[1] CALCULATIONS OF HIGH-SPEED PERFORMANCE FOR SUBMICROMETER ION-IMPLANTED GAAS-MESFET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 913 - 918

[2] DEGRADATION MECHANISMS INDUCED BY HIGH-CURRENT DENSITY IN AL-GATE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 205 - 211

[3] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1032 - 1037

[4] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &

[5] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[8] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &

[9] SURFACE-POTENTIAL EFFECT ON GATE DRAIN AVALANCHE BREAKDOWN IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2027 - 2033

[10] MULLER RS, 1977, DEVICE ELECTRONICS I

[1] CALCULATIONS OF HIGH-SPEED PERFORMANCE FOR SUBMICROMETER ION-IMPLANTED GAAS-MESFET DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 913 - 918

[2] DEGRADATION MECHANISMS INDUCED BY HIGH-CURRENT DENSITY IN AL-GATE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 205 - 211

[3] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1032 - 1037

[4] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 82 - &

[5] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970

[6] PROFILE STUDIES OF ION-IMPLANTED MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1066 - 1071

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[8] SCHOTTKY BARRIER GATE FIELD EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (02): : 307 - &

[9] SURFACE-POTENTIAL EFFECT ON GATE DRAIN AVALANCHE BREAKDOWN IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2027 - 2033

[10] MULLER RS, 1977, DEVICE ELECTRONICS I