SURFACE-POTENTIAL EFFECT ON GATE DRAIN AVALANCHE BREAKDOWN IN GAAS-MESFET

被引：47

作者：

MIZUTA, H

YAMAGUCHI, K

TAKAHASHI, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期

关键词：

D O I：

10.1109/T-ED.1987.23194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：2027 / 2033

页数：7

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