PRE-BREAKDOWN PHENOMENA IN GAAS EPITAXIAL LAYERS AND FETS

被引：20

作者：

TSIRONIS, C

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：277 / 282

页数：6

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共 18 条

[1] ENGELMANN REM, 1976, P IEDM WASHINGTON, P351
[2] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE
FUKUTA, M
SUYAMA, K
SUZUKI, H
NAKAYAMA, Y
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 312 - 317
[3] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE
FURUTSUKA, T
TSUJI, T
HASEGAWA, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567
[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS
HAITZ, RH
GOETZBERGER, A
SCARLETT, RM
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1581 - &
[5] DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES
HOUNG, YM
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3348 - 3352
[6] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS
HOUSTON, PA
EVANS, AGR
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 197 - 204
[7] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147
[8] LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS
MICHEL, AE
MARINACE, JC
NATHAN, MI
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3543 - &
[9] VISIBLE-LIGHT EMISSION FROM GAAS FIELD-EFFECT TRANSISTOR
MIMURA, T
SUZUKI, H
FUKUTA, M
[J]. PROCEEDINGS OF THE IEEE, 1977, 65 (09) : 1407 - 1408
[10] TRANSPORT PROPERTIES OF GAAS
RUCH, JG
KINO, GS
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 921 - +