LOW-TEMPERATURE LIQUID-PHASE EPITAXY OF SILICON

Good quality liquid phase epitaxial growth of silicon has been achieved at growth temperatures down to 350-degrees-C for the first time from alloy solutions of Al/Sn, Al/Zn, and Au/Sn. These alloys, together with Au/Pb, have higher Si solubility below 600-degrees-C than solvents previously used. Unusual morphology of the epitaxial layer grown from Au/Pb solution was possibly caused by two immiscible liquid phases within the alloy system. Heavily p-type doped thin films grown from Al-based solvents, and lightly n-type thin films grown from Au-based solvents, were characterized by spreading resistance measurements.