EFFECTS OF NH3 AND N2 SOURCE GASES AND PLASMA EXCITATION FREQUENCIES ON THE REACTION CHEMISTRY FOR SI3N4 THIN-FILM GROWTH BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

NH3/He and N2/He discharges can produce qualitatively different silicon nitride films when they are used as N-atom sources in the remote plasma-enhanced chemical-vapor deposition process. Radio frequency and microwave excitation at frequencies, 13.56 MHz and 2.54 GHz, respectively, were used to produce significantly different electron temperatures T(e), electron energy distribution functions, and electron densities n(e). Differences in these plasma parameters were then correlated with important aspects of the silicon nitride reaction chemistry, including the incorporation of hydrogen in SiH and/or Si-NH bonding arrangements.