RECENT ADVANCES IN RIBBON-TO-RIBBON CRYSTAL-GROWTH

被引：17

作者：

BAGHDADI, A

GURTLER, RW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90247-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：236 / 246

页数：11

共 11 条

[1]

Baghdadi A., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P363

[2]

BAGHDADI A, 1978, DOEJPL954376798 TECH, P16

[3]

DUNCAN CS, 1978, DOEJPL954654781 CONT

[4] NATURE OF THERMAL-STRESSES AND POTENTIAL FOR REDUCED THERMAL BUCKLING OF THIN SILICON RIBBON GROWN AT HIGH-SPEED [J].

GURTLER, RW .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :69-82

[5] SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION [J].

GURTLER, RW ;

BAGHDADI, A ;

ELLIS, RJ ;

LESK, IA .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :441-477

[6] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J].

HOPKINS, RH ;

SEIDENSTICKER, RG ;

RAICHOUDHURY, P ;

BLAIS, PD ;

MCCORMICK, JR .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :493-498

[7]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124

[8]

LEGGE RN, UNPUBLISHED

[9]

LESK IA, 1977, 12TH IEEE PHOT SPEC, P173

[10]

Milek J., 1971, SILICON NITRIDE MICR

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