STUDY OF THE GROWTH-MECHANISM OF MODULATED STRUCTURES IN THE INAS-GAAS SYSTEM

被引：8

作者：

KANTER, YO

GUTAKOVSKY, AK

FEDOROV, AA

REVENKO, MA

RUBANOV, SV

STENIN, SI

机构：

[1] USSR Acad of Sciences, Russia

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

Crystals - Dislocations - Electrons - Diffraction - Semiconducting Gallium Arsenide - Strain;

D O I：

10.1016/0040-6090(88)90471-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of the density of InAs islands on GaAs(100) with a minimum at a substrate temperature of around 500°C has been obtained. This dependence can be explained by a transition from complete to incomplete condensation. The migration and desorption energies of indium adatoms were found to be 1.26 eV and 1.40 eV respectively. Electron diffraction on the misfit dislocation network was observed. The conditions for indium segregation during the growth of InxGa1-xAs alloy films were established.

引用

页码：497 / 502

页数：6

共 16 条

[1] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS [J].