MULTIPLE INSULATOR LAYERS ON GAAS STUDIED BY AUGER ANALYSIS

被引：3

作者：

GRANT, JT

HARTNAGEL, HL

SCHUERMEYER, FL

BAYRAKTAROGLU, B

MAYS, D

机构：

[1] TH DARMSTADT,INST HOCHFREQUENZTECH,D-6100 DARMSTADT,FED REP GER

[2] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 46卷 / 02期

关键词：

D O I：

10.1080/00207217908900987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently research was focused on the formation of multiple layer anodic insulators on GaAs to obtain superior passivation layers. In particular A12O3 films in conjunction with native oxide films were evaluated. In this paper Auger analysis studies are reported on AI2O3-native oxide films on CaAs. The results indicate that oxygen migrates during anodizfttion towards the interface while Ga and As migrate towards the surface. © Taylor and Francis Group, LLC.

引用

页码：209 / 214

页数：6

共 11 条

[1] ANODIC OXIDES ON GAAS .3. ELECTRICAL-PROPERTIES [J].