CHARGE NEUTRALITY IN SEMICONDUCTORS WITH IMPLANTED IMPURITY PROFILES

被引：4

作者：

GRIMSHAW, JA

OSBORNE, DN

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 07期

关键词：

D O I：

10.1016/0038-1101(71)90136-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：603 / &

共 8 条

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[3]

DEARNALEY G, 1969, AERER6197

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[5]

JONSHER AK, 1960, PRINCIPLES SEMICONDU, P154

[6] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

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[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

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[8] IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON [J].

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