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ANNEALING EFFECT ON LATTICE DISTORTION IN ANODIZED POROUS SILICON LAYERS

被引：37
作者：
SUGIYAMA, H
NITTONO, O
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期
关键词：
D O I：
10.1143/JJAP.28.L2013
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L2013 / L2016
页数：4
相关论文
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