VERY LOW-NOISE AL0.3GA0.7AS/GA0.65IN0.35AS/GAAS SINGLE QUANTUM-WELL PSEUDOMORPHIC HEMTS

被引：19

作者：

CHAO, PC ^{[1
]}

HO, P ^{[1
]}

DUH, KHG ^{[1
]}

SMITH, PM ^{[1
]}

BALLINGALL, JM ^{[1
]}

JABRA, AA ^{[1
]}

LEWIS, N ^{[1
]}

HALL, EL ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 01期

关键词：

GaAs; Semiconductor devices and materials; Transistors;

D O I：

10.1049/el:19900018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：27 / 28

页数：2

共 9 条

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