NOVEL PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES WITH GAAS-IN0.3 GA0.7 AS THIN STRAINED SUPERLATTICE ACTIVE LAYERS

被引：30

作者：

BALLINGALL, JM ^{[1
]}

HO, P ^{[1
]}

TESSMER, GJ ^{[1
]}

MARTIN, PA ^{[1
]}

LEWIS, N ^{[1
]}

HALL, EL ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 21期

关键词：

D O I：

10.1063/1.101146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2121 / 2123

页数：3

共 15 条

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[5] HENDERSON T, 1987, IEEE IEDM 87, P418
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[8] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
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[9] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 879 - 886
[10] SURFACE KINETIC CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-QUALITY INVERTED HETEROINTERFACES
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