SURFACE KINETIC CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-QUALITY INVERTED HETEROINTERFACES

被引：4

作者：

NEWMAN, PG ^{[1
]}

CHO, NM ^{[1
]}

KIM, DJ ^{[1
]}

MADHUKAR, A ^{[1
]}

SMITH, DD ^{[1
]}

AUCOIN, TR ^{[1
]}

IAFRATE, GJ ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1483 / 1486

页数：4

共 18 条

[1] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
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[2] ELECTRON CONCENTRATIONS AND MOBILITIES IN SELECTIVELY DOPED ALGAAS-GAAS-ALGAAS DOUBLE HETEROSTRUCTURES
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[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 387 - 391
[3] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
CHEN, P
MADHUKAR, A
KIM, JY
LEE, TC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 650 - 652
[4] SPECULAR BEAM INTENSITY BEHAVIOR IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF AL0.3GA0.7AS ON GAAS(100) AND IMPLICATIONS FOR INVERTED INTERFACES
CHO, NM
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MADHUKAR, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1909 - 1911
[5] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[6] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
DRUMMOND, TJ
KLEM, J
ARNOLD, D
FISCHER, R
THORNE, RE
LYONS, WG
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[7] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
GHAISAS, SV
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[8] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY
GHAISAS, SV
MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069
[9] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110
[10] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS
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CHEN, P
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 739 - 741

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