INFLUENCE OF SUBSTRATE-TEMPERATURE AND INAS MOLE FRACTION ON THE INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAS SINGLE QUANTUM WELLS ON GAAS

被引：44

作者：

RADULESCU, DC ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

BALLINGALL, JM ^{[1
]}

RAMSEYER, GO ^{[1
]}

HERSEE, SD ^{[1
]}

机构：

[1] GE CO,ELECTR LAB,SYRACUSE,NY 13221

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.584432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 115

页数：5

共 26 条

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