SUBMINIATURE SILICON INTEGRATED ELECTRET CAPACITOR MICROPHONE

被引:27
作者
MURPHY, P [1 ]
HUBSCHI, K [1 ]
DEROOIJ, N [1 ]
RACINE, C [1 ]
机构
[1] UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
来源
IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1989年 / 24卷 / 03期
关键词
D O I
10.1109/14.30895
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:495 / 498
页数:4
相关论文
共 21 条
[1]   THE IMPACT OF MOSFET-BASED SENSORS [J].
BERGVELD, P .
SENSORS AND ACTUATORS, 1985, 8 (02) :109-127
[2]   A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].
FINNE, RM ;
KLEIN, DL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) :965-&
[3]  
FRAIM F, 1970, J AUDIO ENG SOC, V18, P511
[4]  
FRANZ J, 1988, VDI BER, V677, P299
[5]  
Gunther P., 1988, 6th International Symposium on Electrets (ISE 6) Proceedings (IEEE Cat. No.88CH2593-2), P137, DOI 10.1109/ISE.1988.38537
[6]  
HIJAB RS, 1985, JUN IEEE INT C SOL S, P178
[7]   SILICON-DIOXIDE ELECTRET TRANSDUCER [J].
HOHM, D ;
GERHARDMULTHAUPT, R .
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1984, 75 (04) :1297-1298
[8]  
HOHM D, 1983, 11TH P INT C AC PAR, V6, P29
[9]  
HOHM D, 1987, FORTSCHRITTE AKUSTIK, P461
[10]  
KILLION MC, 1974, J AUDIO ENG SOC, V22, P237