HIGH-SPEED SWITCHING OF FAR-INFRARED RADIATION BY PHOTOIONIZATION IN A SEMICONDUCTOR

被引：72

作者：

VOGEL, T ^{[1
]}

DODEL, G ^{[1
]}

HOLZHAUER, E ^{[1
]}

SALZMANN, H ^{[1
]}

THEURER, A ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PLASMAFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED OPTICS | 1992年 / 31卷 / 03期

关键词：

LASER-BEAM PULSING AND SWITCHING; CHARGE CARRIERS (GENERATION AND RECOMBINATION); REFRACTIVE INDEX; REFLECTIVITY;

D O I：

10.1364/AO.31.000329

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An investigation of subnanosecond switching of 119-mu-m radiation achieved by irradiating high-resistivity silicon wafers with 1.7-ns, 337-nm pulses from a nitrogen laser is presented. The experimental results are compared with a one-dimensional numerical multilayer model, which accounts for the generation, recombination, and diffusion of the free carriers and the resulting change of the far-infrared optical properties of the Si wafer.

引用

页码：329 / 337

页数：9