SUBNANOSECOND OPTICAL SWITCHING OF FAR INFRARED RADIATION

被引：36

作者：

SALZMANN, H

VOGEL, T

DODEL, G

机构：

来源：

OPTICS COMMUNICATIONS | 1983年 / 47卷 / 05期

关键词：

D O I：

10.1016/0030-4018(83)90041-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：340 / 342

页数：3

共 16 条

[1] ACTIVE PULSE SHAPING IN THE PICOSECOND DOMAIN [J].

AGOSTINELLI, J ;

MOUROU, G ;

GABEL, CW .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :731-733

[2] PICOSECOND ELLIPSOMETRY OF TRANSIENT ELECTRON-HOLE PLASMAS IN GERMANIUM [J].

AUSTON, DH ;

SHANK, CV .

PHYSICAL REVIEW LETTERS, 1974, 32 (20) :1120-1123

[3] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373

[4] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J].

AUSTON, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :101-103

[5] HIGH-POWER SUBNANOSECOND PULSES FROM AN INJECTION MODE-LOCKED MULTI-ATMOSPHERE CO2 OSCILLATOR [J].

CORKUM, PB ;

ALCOCK, AJ ;

ROLLIN, DF ;

MORRISON, HD .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :27-29

[6]

DODEL G, 1983, J APPL PHYS, V54

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[8] INTERACTION OF MICROWAVE BIASED N-GAAS AND 337-MU-M RADIATION [J].

EPTON, PJ ;

WILSON, WL ;

TITTEL, FK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (06) :409-412

[9]

GENZEL L, 1965, JPN J APPL PHYS, VS 4, P353

[10] FAST TRANSIENT SPECTROSCOPY OF FREE-CARRIER PLASMA EDGE IN GE [J].

JAMISON, SA ;

NURMIKKO, AV ;

GERRITSEN, HJ .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :640-643

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