GENERATION PROCESS OF DISLOCATIONS IN PRECIPITATE-CONTAINING SILICON-CRYSTALS

被引：11

作者：

NISHINO, Y ^{[1
]}

IMURA, T ^{[1
]}

机构：

[1] NAGOYA UNIV, DEPT MET, CHIKUSA KU, NAGOYA, AICHI 464, JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1982年 / 73卷 / 01期

关键词：

D O I：

10.1002/pssa.2210730122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 182

页数：10

共 20 条

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