FABRICATION OF OVERPASS MICROSTRUCTURES IN GAAS USING ISOTROPIC REACTIVE ION ETCHING

被引：3

作者：

HUR, KY

COMPTON, RC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.586043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2486 / 2487

页数：2

共 12 条

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[2]

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[8]

HUR KY, UNPUB

[9]

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