NICKEL ATOMIC DIFFUSION IN AMORPHOUS-SILICON

被引:52
作者
KUZNETSOV, AY [1 ]
SVENSSON, BG [1 ]
机构
[1] INST MICROELECTR TECHNOL,MOSCOW 142432,RUSSIA
关键词
D O I
10.1063/1.113175
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter we report on measurements of the diffusion coefficient for Ni in unrelaxed amorphous (α) Si at temperatures between 270 and 435°C using secondary ion mass spectrometry. A diffusion coefficient of ∼3×10-3 exp[-1.30(eV)/kT] cm2/s is obtained, which is approximately six to eight orders of magnitude lower than that for interstitial diffusion of Ni in crystalline (c) Si. The diffusion process in α-Si is described by a model invoking trap-retarded interstitial migration; the main difference between the diffusion coefficients in α-Si and c-Si is attributed to the presence of intrinsic traps in the amorphous phase with a binding enthalpy of ∼0.83 eV.© 1995 American Institute of Physics.
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页码:2229 / 2231
页数:3
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