NISI2 PRECIPITATION IN NICKEL-IMPLANTED SILICON FILMS

被引：23

作者：

CAMMARATA, RC

THOMPSON, CV

TU, KN

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02174

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期

关键词：

D O I：

10.1063/1.99003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1106 / 1108

页数：3

共 12 条

[1] A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION [J].

BENE, RW .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1826-1833

[2]

CAMPISI GJ, 1986, P MATERIALS RES SOC, V54, P747

[3]

CHRISTIAN JW, 1965, THEORY TRANSFORMATIO, P506

[4] Kinetics of formation of silicides: A review [J].

d'Heurle, F. M. ;

Gas, P. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :205-221

[5] THERMAL AND ION-INDUCED DISSOCIATION OF NISI AND NISI2 IN CONTACT WITH NICKEL [J].

HUNG, LS ;

MAYER, JW .

THIN SOLID FILMS, 1983, 109 (01) :85-92

[6] LOW-TEMPERATURE FORMATION OF NISI2 FROM EVAPORATED SILICON [J].

LIEN, CD ;

NICOLET, MA ;

LAU, SS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :123-128

[7]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[8]

OLOWOLFE JO, 1975, THIN SOLID FILMS, V38, P143

[9]

THOMPSON RD, 1985, PHYS REV B, V33, P5210

[10]

TU KN, 1986, ADV ELECT MAT, P147

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