NISI2 PRECIPITATION IN NICKEL-IMPLANTED SILICON FILMS

被引:23
作者
CAMMARATA, RC
THOMPSON, CV
TU, KN
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02174
关键词
D O I
10.1063/1.99003
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1106 / 1108
页数:3
相关论文
共 12 条
[1]   A KINETIC-MODEL FOR SOLID-STATE SILICIDE NUCLEATION [J].
BENE, RW .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1826-1833
[2]  
CAMPISI GJ, 1986, P MATERIALS RES SOC, V54, P747
[3]  
CHRISTIAN JW, 1965, THEORY TRANSFORMATIO, P506
[4]   Kinetics of formation of silicides: A review [J].
d'Heurle, F. M. ;
Gas, P. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :205-221
[5]   THERMAL AND ION-INDUCED DISSOCIATION OF NISI AND NISI2 IN CONTACT WITH NICKEL [J].
HUNG, LS ;
MAYER, JW .
THIN SOLID FILMS, 1983, 109 (01) :85-92
[6]   LOW-TEMPERATURE FORMATION OF NISI2 FROM EVAPORATED SILICON [J].
LIEN, CD ;
NICOLET, MA ;
LAU, SS .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01) :123-128
[7]  
MURARKA SP, 1983, SILICIDES VLSI APPLI
[8]  
OLOWOLFE JO, 1975, THIN SOLID FILMS, V38, P143
[9]  
THOMPSON RD, 1985, PHYS REV B, V33, P5210
[10]  
TU KN, 1986, ADV ELECT MAT, P147