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INTERFACE STUDIES OF MIS STRUCTURE BY SURFACE PHOTOVOLTAGE MEASUREMENTS
被引:12
作者
:
LAM, YW
论文数:
0
引用数:
0
h-index:
0
LAM, YW
机构
:
来源
:
ELECTRONICS LETTERS
|
1970年
/ 6卷
/ 06期
关键词
:
D O I
:
10.1049/el:19700108
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:153 / +
页数:1
相关论文
共 6 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
GOETZBER.A, 1966, AT&T TECH J, V45, P1097
[3]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[4]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[5]
SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1055
-
+
[6]
FERMI LEVEL STABILIZATION AND SURFACE STATES AT INTERFACES OF SI(111) SURFACES AND INSULATING LAYERS
YAMAGISHI, H
论文数:
0
引用数:
0
h-index:
0
YAMAGISHI, H
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1968,
25
(03)
: 766
-
+
←
1
→
共 6 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
GOETZBER.A, 1966, AT&T TECH J, V45, P1097
[3]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[4]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[5]
SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1055
-
+
[6]
FERMI LEVEL STABILIZATION AND SURFACE STATES AT INTERFACES OF SI(111) SURFACES AND INSULATING LAYERS
YAMAGISHI, H
论文数:
0
引用数:
0
h-index:
0
YAMAGISHI, H
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1968,
25
(03)
: 766
-
+
←
1
→