LOW-FREQUENCY NOISE IN P-CHANNEL HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS (HIGFETS) AT 77-K AND DRAIN CURRENT OF 1 MU-A

被引：3

作者：

BIRBAS, AN ^{[1
]}

VANRHEENEN, AD ^{[1
]}

BAIER, SM ^{[1
]}

机构：

[1] HONEYWELL INC,SENSORS & SIGNAL PROC LAB,BLOOMINGTON,MN 55420

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：316 / 318

页数：3

共 8 条

[1]

BAIER SM, IN PRESS IEEE T ELEC

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[3]

DUH KH, 1983, NOISE PHYSICAL SYSTE, P283

[4]

HOOGE FN, 1976, PHYSICA B, V83, P19

[5]

KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059

[6]

KORNFIELD A, 1985, 14TH P CONV EL EL EN

[7] FEASIBILITY OF A CRYOGENIC MULTIPLEXER FOR SPACEBORNE APPLICATIONS [J].

ROSGEN, T ;

REYNERI, L ;

DEVIT, ON .

CRYOGENICS, 1987, 27 (01) :12-14

[8] GALLIUM-ARSENIDE E-MESFET AND D-MESFET DEVICE NOISE CHARACTERISTICS OPERATED AT CRYOGENIC TEMPERATURES WITH ULTRALOW DRAIN CURRENT [J].

SATO, RN ;

SOKOLICH, M ;

DOUDOUMOPOULOS, N ;

DUFFEY, JR .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :238-240

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