VAPOR-PHASE ATOMIC LAYER EPITAXY OF CUGAS2 AT ATMOSPHERIC-PRESSURE USING METAL CHLORIDES AND H2S

被引：10

作者：

TSUBOI, N

ISU, T

KAKUDA, N

TERASAKO, T

IIDA, S

机构：

[1] Nagaoka University of Technology, Kamitomioka, Nagaoka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 2B期

关键词：

ATOMIC LAYER EPITAXY; VAPOR PHASE EPITAXY; CUGAS2; CHALCOPYRITE COMPOUND; X-RAY DIFFRACTION; PHOTOLUMINESCENCE; STOICHIOMETRY;

D O I：

10.1143/JJAP.33.L244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the alternate feeding of metal chlorides (CuCl, GaCl3) and H2S sources, the growth rate saturation of CuGaS2 on GaP was observed for substrate temperatures between 530-degrees-C and 570-degrees-C, and also for some range of H2S flow rate. Together with the growth rate saturation behavior for metal chlorides reported in our previous paper, these results can be considered to indicate achievement of atomic layer epitaxy (ALE) of CuGaS2. The growth orientation change leading to c-axis growth was observed for a large H2S flow rate. Some possibility of stoichiometry control by ALE was suggested from photoluminescence spectra.

引用

页码：L244 / L246

页数：3

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