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GRAIN-BOUNDARY EDGE PASSIVATION OF GAAS FILMS BY SELECTIVE ANODIZATION
被引:16
作者:
PANDE, KP
HSU, YS
BORREGO, JM
GHANDHI, SK
机构:
[1] Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy
关键词:
D O I:
10.1063/1.90513
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Solar cells built on polycrystalline gallium arsenide usually have very leaky reverse characteristics and, consequently, low open-circuit voltage. These problems arise from the effect of the Schottky diode made on the grain boundary, which behaves like n+-material. This diode shunts the active Schottky solar cell and deteriorates its performance characteristics. In this letter we describe the use of selective-anodization techniques to provide an insulating barrier over the edge of the grain boundary in order to passivate it. Leakage current reduction of 5-6 decades has been achieved by this method, with both aqueous and nonaqueous anodization methods.
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页码:717 / 719
页数:3
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