MECHANISM FOR NEARLY OHMIC BEHAVIOR IN ANNEALED AU/N-GAAS SCHOTTKY DIODES

被引：4

作者：

LEON, RP

NEWMAN, N

LILIENTALWEBER, Z

WEBER, ER

WASHBURN, J

SPICER, WE

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / 715

页数：5

共 16 条

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[10]

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