LATTICE IMAGING OF FAULTED DIPOLES IN SILICON

被引：40

作者：

SPENCE, JCH

KOLAR, H

机构：

[1] Department of Physics, Arizona State University, Tempe, AZ

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1979年 / 39卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/01418617908239275

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm−2 for the stacking-fault energy in silicon. © 1979 Taylor & Francis Group, LLC.

引用

页码：59 / 63

页数：5

共 13 条

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