THERMAL-STABILITY OF INDIUM TIN-OXIDE/N-GAAS SCHOTTKY DIODES

被引：10

作者：

ALIYU, YH

MORGAN, DV

BUNCE, RW

机构：

[1] School of Electrical, Electronic & Systems Engineering, University of Wales, College of Cardiff, Cardiff

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal degradation of ITO Schottky contacts on GaAs has been studied. The rectifying contacts shows rapid degradation with heating and could have serious implications for optoelectronic devices that operate at elevated temperatures.

引用

页码：142 / 144

页数：3

共 7 条

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