ANALYSIS OF MARKER MOTION IN THIN-FILM SILICIDE FORMATION

被引:32
作者
TU, KN [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.324178
中图分类号
O59 [应用物理学];
学科分类号
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页码:3379 / 3382
页数:4
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共 20 条
[11]   DIFFUSION AND KIRKENDALL SHIFT IN BINARY ALLOYS [J].
MANNING, JR .
ACTA METALLURGICA, 1967, 15 (05) :817-&
[12]  
MANNING JR, 1961, PHYS REV, V124, P490
[13]  
MANNING JR, 1968, DIFFUSION KINETICS A
[14]   DISSOCIATION MECHANISM FOR SOLID-PHASE EPITAXY OF SILICON IN SI[100]/PD2SI/SI (AMORPHOUS) SYSTEM [J].
PRETORIUS, R ;
LIAU, ZL ;
LAU, SS ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :598-600
[15]  
Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]
[16]  
SMIGELSKAS AD, 1947, T AM I MIN MET ENG, V171, P130
[17]  
SMITHELLS CJ, 1967, METALS REFERENCE BOO, V1
[18]  
SWALIN RA, 1964, THERMODYNAMICS SOLID, pCH11
[19]   STRUCTURE AND GROWTH KINETICS OF NI2SI ON SILICON [J].
TU, KN ;
CHU, WK ;
MAYER, JW .
THIN SOLID FILMS, 1975, 25 (02) :403-413
[20]   TUNGSTEN AS A MARKER IN THIN-FILM DIFFUSION STUDIES [J].
VANGURP, GJ ;
SIGURD, D ;
VANDERWEG, WF .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :159-161