TUNGSTEN AS A MARKER IN THIN-FILM DIFFUSION STUDIES

被引：45

作者：

VANGURP, GJ

SIGURD, D

VANDERWEG, WF

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

[2] RES INST PHYS,STOCKHOLM,SWEDEN

[3] PHILIPS RES LABS,AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.89007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：159 / 161

页数：3

共 9 条

[1]

Adda Y., 1966, DIFFUSION SOLIDS

[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].

BROWN, F ;

MACKINTOSH, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102

[3] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[4]

CHU WK, 1975, APPL PHYS LETT, V25, P454

[5] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J].

MADER, S ;

TU, KN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :501-503

[6]

Neugebauer CA, 1970, HDB THIN FILM TECHNO, P8

[7]

VANDEWATERBEEND J, 1966, PHILIPS RES REP, V21, P27

[8] COBALT SILICIDE LAYERS ON SI .1. STRUCTURE AND GROWTH [J].

VANGURP, GJ ;

LANGEREIS, C .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4301-4307

[9]

Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

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