EFFECTS OF BORON CONCENTRATION UPON OXYGEN PRECIPITATION IN CZ SILICON

被引：16

作者：

BULLA, DAP

CASTRO, WE

STOJANOFF, V

PONCE, FA

HAHN, S

TILLER, WA

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94305

[2] STANFORD UNIV,STANFORD,CA 94305

[3] SILTEC CORP,MENLO PK,CA 94025

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90208-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：91 / 96

页数：6

共 16 条

[1]

CARVALHO CAM, 1985, THESIS U SAO PAULO B

[2] THEORY OF DIFFUSE X-RAY-SCATTERING AND ITS APPLICATION TO STUDY OF POINT-DEFECTS AND THEIR CLUSTERS [J].

DEDERICHS, PH .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :471-496

[3] CONFIGURATION OF ATOMIC DEFECTS AS DETERMINED FROM SCATTERING STUDIES [J].

EHRHART, P .

JOURNAL OF NUCLEAR MATERIALS, 1978, 69-7 (1-2) :200-214

[4] KINK FORMATION IN CHARGED DISLOCATION [J].

HAASEN, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01) :145-155

[5]

HAHN SJ, IN PRESS

[6]

HERRING C, 1956, PHYS REV, V101, P1755

[7] X-RAY REFLEXIONS FROM DILUTE SOLID SOLUTIONS [J].

HUANG, K .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1947, 190 (1020) :102-117

[8]

MATSUMOTO S, 1985, APPL PHYS LETT, V46, P959

[9] ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J].

PATEL, JR ;

TESTARDI, LR ;

FREELAND, PE .

PHYSICAL REVIEW B, 1976, 13 (08) :3548-3557

[10]

PEARCE CW, 1985, MATER RES SOC S P, V36, P231

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