SCANNING TUNNELING MICROSCOPIC INVESTIGATIONS OF ELECTROFORMED PLANAR METAL-INSULATOR-METAL DIODES

被引:14
作者
PAGNIA, H
SOTNIK, N
WIRTH, W
机构
[1] Institut für Angewandte Physik, Technische Hochschule, Darmstadt, D6100
关键词
D O I
10.1080/00207219008920287
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electroformed metal-insulator-metal diodes showing voltage controlled negative resistance are investigated with a scanning tunnelling microscope. The topography and the potential distribution are recorded simultaneously at various voltages applied across the sample. The sharp potential drop in the microslit suggests a layer model with current carrying filaments between the layers. Material transport in the vicinity of the potential drop may be an indication of the existence of hot spots. © 1990 Taylor & Francis Ltd.
引用
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页码:25 / 32
页数:8
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