SUBTHRESHOLD SLOPE IN THIN-FILM SOI MOSFETS

被引：98

作者：

WOUTERS, DJ ^{[1
]}

COLINGE, JP ^{[1
]}

MAES, HE ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN, ESAT LAB, IWONL, B-3000 LOUVAIN, BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期

关键词：

D O I：

10.1109/16.57165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The subthreshold conduction regime in thick- and thin-film SOI MOSFET’s is studied. Using the depletion approximation, a one-dimensional analytical expression for the subthreshold slope is derived, and equivalence with a simple capacitive network is proven. The model accounts for the influence of the back interface properties on the subthreshold swing in the thin-film regime. The coupling between front and back surface potential, and the role of backside conduction on the front interface characteristics are accounted for. The case of double gate control is studied in more detail. Experimental verification of the model with measured subthreshold slopes in thin-film MOSFET devices is given. © 1990 IEEE

引用

页码：2022 / 2033

页数：12

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