PHOTOCATHODIC DEPOSITION OF GOLD-ALLOYS FOR OHMIC CONTACTS TO III-V MATERIALS

被引：16

作者：

KELLY, JJ ^{[1
]}

RIKKEN, JMG ^{[1
]}

JACOBS, JWM ^{[1
]}

VALSTER, A ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：48 / 52

页数：5

共 15 条

[1]

Bard A., 1985, STANDARD POTENTIALS

[2] GOLD CYANIDE ION ELECTROREDUCTION ON GOLD ELECTRODE [J].

BELTOWSKABRZEZINSKA, M ;

DUTKIEWICZ, E ;

LAWICKI, W .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1979, 99 (03) :341-346

[3] SPECIFIC CONTACT RESISTANCE FOR ALLOYED AU-ZN CONTACTS ON PARA-TYPE GAXIN1-XPYAS1-Y [J].

CASEY, HC ;

LOGAN, RA ;

FOY, PW ;

AUGUSTYNIAK, WM ;

VANDENBERG, JM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2933-2934

[4] OHMIC CONTACTS FOR GAAS DEVICES [J].

COX, RH ;

STRACK, H .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1213-+

[5]

HARRISON JA, 1972, J ELECTROANAL CHEM, V40, P113

[6]

JACOBS JWM, IN PRESS J ELECTROCH

[7] THE INFLUENCE OF SURFACE RECOMBINATION AND TRAPPING ON THE CATHODIC PHOTOCURRENT AT P-TYPE III-V-ELECTRODES [J].

KELLY, JJ ;

MEMMING, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :730-738

[8] INVESTIGATION OF THE C-V BEHAVIOR OF GAAS-METAL AND GAAS-ELECTROLYTE CONTACTS UNDER FORWARD BIAS [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (11) :2135-2142

[9] PHOTOELECTROCHEMICAL DEPOSITION OF MICROSCOPIC METAL-FILM PATTERNS ON SI AND GAAS [J].

MICHEELS, RH ;

DARROW, AD ;

RAUH, RD .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :418-420

[10] ON THE FERMI LEVEL PINNING BEHAVIOR OF METAL/III-V SEMICONDUCTOR INTERFACES [J].

NEWMAN, N ;

SPICER, WE ;

KENDELEWICZ, T ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :931-938

← 1 2 →