INVESTIGATION OF THE C-V BEHAVIOR OF GAAS-METAL AND GAAS-ELECTROLYTE CONTACTS UNDER FORWARD BIAS

被引：10

作者：

LAFLERE, WH ^{[1
]}

VANMEIRHAEGHE, RL ^{[1
]}

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1980年 / 13卷 / 11期

关键词：

D O I：

10.1088/0022-3727/13/11/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2135 / 2142

页数：8

共 7 条

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[2] FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES [J].

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GOMES, WP .

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[3] FREQUENCY AND VOLTAGE DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GAAS-METAL SCHOTTKY BARRIERS [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

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[5]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[6] EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES [J].

SMITH, BL .

SOLID-STATE ELECTRONICS, 1968, 11 (04) :502-&

[7] AU-(N-TYPE) INP SCHOTTKY BARRIERS AND THEIR USE IN DETERMINING MAJORITY CARRIER CONCENTRATIONS IN N-TYPE INP [J].

SMITH, BL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (11) :1358-1362

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