FREQUENCY AND VOLTAGE DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GAAS-METAL SCHOTTKY BARRIERS

被引：16

作者：

LAFLERE, WH ^{[1
]}

VANMEIRHAEGHE, RL ^{[1
]}

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT, FYS SCHEIKUNDE LAB, B-9000 GHENT, BELGIUM

来源：

SURFACE SCIENCE | 1978年 / 74卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90276-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：125 / 140

页数：16

共 14 条

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[6] FREQUENCY-DEPENDENCE OF IMPEDANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODES [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

SURFACE SCIENCE, 1976, 59 (02) :401-412

[7] DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE [J].

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[8]

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[10] EFFECT OF SURFACE PROPERTIES ON N-TYPE GAAS-NI AND GAAS-AL SCHOTTKY DIODES [J].

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :469-475

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