CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE

被引：220

作者：

DAVIS, RF

SITAR, Z

WILLIAMS, BE

KONG, HS

KIM, HJ

PALMOUR, JW

EDMOND, JA

RYU, J

GLASS, JT

CARTER, CH

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1988年 / 1卷 / 01期

关键词：

D O I：

10.1016/0921-5107(88)90032-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：77 / 104

页数：28

共 121 条

[51]

KNIGHTS JC, 1978, J APPL PHYS, V49, P1291, DOI 10.1063/1.325024

[52]

KOBASHI K, 1987, 34TH NAT S AM VAC SO

[53] EXPERIMENTAL 3C-SIC MOSFET [J].

KONDO, Y ;

TAKAHASHI, T ;

ISHII, K ;

HAYASHI, Y ;

SAKUMA, E ;

MISAWA, S ;

DAIMON, H ;

YAMANAKA, M ;

YOSHIDA, S .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :404-406

[54] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J].

KONG, HS ;

GLASS, JT ;

DAVIS, RF .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1074-1076

[55]

KROEMER H, 1986, MATER RES SOC S P, V67, P3

[56]

KURUKAWA K, 1986, APPL PHYS LETT, V48, P1536

[57]

KUZNETSOV AV, 1982, SOV MICROELECTRON+, V11, P214

[58] DIELECTRIC-PROPERTIES OF REACTIVELY SPUTTERED GALLIUM NITRIDE FILMS [J].

LAKSHMI, E .

THIN SOLID FILMS, 1981, 83 (01) :L137-L139

[59] THE GROWTH OF HIGHLY RESISTIVE GALLIUM NITRIDE FILMS [J].

LAKSHMI, E ;

MATHUR, B ;

BHATTACHARYA, AB ;

BHARGAVA, VP .

THIN SOLID FILMS, 1980, 74 (01) :77-82

[60]

LEITH FA, 1967, AFRCL670123 ION PHYS

← 1 2 3 4 5 6 7 8 9 10 →