ELECTROMIGRATION AND MATTHIESSEN RULE - EXPERIMENTS ON NONPASSIVATED AL-1-PERCENT-SI FILMS

被引:11
作者
BALDINI, GL [1 ]
SCORZONI, A [1 ]
机构
[1] IRST,DIV SCI MAT,I-38050 TRENT,ITALY
关键词
D O I
10.1016/0040-6090(90)90271-E
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal characterization of Al-1%Si thin films was performed before and after electromigration life tests. The additional resistance, due to the electromigration damage, was found to be dependent on temperature. Furthermore, the conservation of the thermal coefficient of resistivity was ascertained. Such a behaviour does not conform to Matthiessen's rule, which is obeyed when changes in resistivity can be ascribed to an increase in defect concentration. It is suggested that the electromigration damage should not be interpreted as a dilute solid solution of defects in the aluminium lattice but as a geometrical change, even in the first stages of the phenomenon. © 1990.
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页码:31 / 36
页数:6
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