GROWTH TEMPERATURE-DEPENDENT RADIATIVE RELAXATION IN ALGAAS GAAS MULTIPLE QUANTUM WELLS

被引：9

作者：

MATSUEDA, H ^{[1
]}

HARA, K ^{[1
]}

机构：

[1] HORIBA LTD,MINAMI KU,KYOTO 601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.101893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：362 / 364

页数：3

共 10 条

[1]

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[4]

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[5] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

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[6] RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].

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BURNHAM, RD .

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[7] ALGAAS OEIC TRANSMITTERS [J].

MATSUEDA, H .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1382-1390

[8] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

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[9]

OCONNOR DV, 1984, TIME CORRELATED SING, pCH6

[10]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, pCH12

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