PRESSURE-DEPENDENCE OF THE VALENCE-BAND DISCONTINUITY IN GAAS/ALAS AND GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES

被引：43

作者：

LAMBKIN, JD ^{[1
]}

ADAMS, AR ^{[1
]}

DUNSTAN, DJ ^{[1
]}

DAWSON, P ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5546 / 5549

页数：4

共 15 条

[11] THEORETICAL-STUDY OF BAND OFFSETS AT SEMICONDUCTOR INTERFACES [J].

VAN DE WALLE, CG ;

MARTIN, RM .

PHYSICAL REVIEW B, 1987, 35 (15) :8154-8165

[12] HIGH-PRESSURE STUDIES OF GAAS-GA1-XALXAS QUANTUM-WELLS OF WIDTHS 26-A TO 150-A [J].

VENKATESWARAN, U ;

CHANDRASEKHAR, M ;

CHANDRASEKHAR, HR ;

VOJAK, BA ;

CHAMBERS, FA ;

MEESE, JM .

PHYSICAL REVIEW B, 1986, 33 (12) :8416-8423

[13]

VENKATESWARAN U, 1987, 18TH P INT C PHYS SE, P627

[14] PRESSURE-DEPENDENCE OF SHALLOW BOUND-STATES IN GALLIUM-ARSENIDE [J].

WOLFORD, DJ ;

BRADLEY, JA .

SOLID STATE COMMUNICATIONS, 1985, 53 (12) :1069-1076

[15] PRESSURE-DEPENDENCE OF GAAS/ALXGA1-XAS QUANTUM-WELL BOUND-STATES - THE DETERMINATION OF VALENCE-BAND OFFSETS [J].

WOLFORD, DJ ;

KUECH, TF ;

BRADLEY, JA ;

GELL, MA ;

NINNO, D ;

JAROS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1043-1050

← 1 2 →