DYNAMICS OF DISLOCATIONS IN II-VI COMPOUNDS UNDER ELECTRONIC EXCITATION - A TEM IN-SITU STUDY

被引：2

作者：

FARESS, A

LEVADE, C

VANDERSCHAEVE, G

机构：

[1] Laboratoire de Physique Des Solides, Associé Au C.N.R.S. U.R.A. 74, I.N.S.A, Toulouse, Complexe Scientifique de Rangueil

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TEM ''in situ'' deformation experiments are performed to study the influence of electron irradiation on the dislocation mobility in a II-VI semiconductor compound: ZnS, in the temperature range 290 to 450 K. It is shown that dislocation glide is strongly enhanced under electronic excitation while being still controlled by the Peierls mechanism. The lattice friction is lowered under excitation. The origin of the observed reduction in activation energy is discussed in relation with the predictions of a recent theoretical model.

引用

页码：583 / 589

页数：7

共 10 条

[1] PHOTOPLASTIC EFFECT IN ZNS SPHALERITE BETWEEN 300-K AND 620-K [J].

COUDERC, JJ ;

LEVADE, C ;

KARA, A .

REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (11) :1129-1138

[2]

FARESS A, IN PRESS PHIL MAG

[3]

HIRTH JP, 1968, THEORY DISLOCATIONS, P493

[4]

KUBIN LP, 1982, ELECTRON MICROS, V2, P531

[5]

LEVADE C, 1991, I PHYS C SER, V117, P143

[6]

LEVADE C, 1990, ELECTRON MICROS, P199

[7] RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V-COMPOUNDS [J].

MAEDA, K ;

TAKEUCHI, S .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :375-385

[8]

MAEDA N, 1989, I PHYS C SER, V104, P303

[9] PROPERTIES OF II-VI SEMICONDUCTORS ASSOCIATED WITH MOVING DISLOCATIONS [J].

OSIPYAN, YA ;

PETRENKO, VF ;

ZARETSKII, AV ;

WHITWORTH, RW .

ADVANCES IN PHYSICS, 1986, 35 (02) :115-188

[10] DYNAMIC DEFECT REACTIONS INDUCED BY MULTIPHONON NONRADIATIVE RECOMBINATION OF INJECTED CARRIERS AT DEEP LEVELS IN SEMICONDUCTORS [J].

SUMI, H .

PHYSICAL REVIEW B, 1984, 29 (08) :4616-4630

← 1 →