RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V-COMPOUNDS

被引：68

作者：

MAEDA, K

TAKEUCHI, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983445

中图分类号：

学科分类号：

摘要：

引用

页码：375 / 385

页数：11

共 25 条

[1] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].

BOHM, K ;

FISCHER, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460

[2] DISLOCATION VELOCITIES IN GAAS [J].

CHOI, SK ;

MIHARA, M ;

NINOMIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745

[3] RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS [J].

DEAN, PJ ;

CHOYKE, WJ .

ADVANCES IN PHYSICS, 1977, 26 (01) :1-30

[4] ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM-ARSENIDE [J].

GWINNER, D ;

LABUSCH, R .

JOURNAL DE PHYSIQUE, 1979, 40 :75-79

[5]

HIRTH JP, 1968, THEORY DISLOCATIONS, P493

[6]

IMAI M, 1983, PHILOS MAG A, V47

[7] STRUCTURE AND ENERGY-LEVEL CALCULATIONS OF DISLOCATIONS IN GALLIUM-ARSENIDE [J].

JONES, R ;

OBERG, S ;

MARKLUND, S .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (05) :839-852

[8] EFFECT OF LIGHT ON MOBILITY OF DISLOCATIONS IN GERMANIUM [J].

KUCZYNSK.GC ;

ALLEN, CW ;

IYER, KR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1337-&

[9]

KUSTERS KH, 1982, UNPUB PHYSICA B

[10] ON THE ENERGY-SPECTRUM OF DISLOCATIONS IN SILICON [J].

KVEDER, VV ;

OSIPYAN, YA ;

SCHROTER, W ;

ZOTH, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :701-713

← 1 2 3 →