ELECTRICAL EFFECTS OF DISLOCATIONS IN GALLIUM-ARSENIDE

被引：12

作者：

GWINNER, D ^{[1
]}

LABUSCH, R ^{[1
]}

机构：

[1] DEUTSCHEN FORSCHUNGSGEMEINSCHAFT,SONDERFORSCHUNGSBEREICH 126,GOTTINGEN,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1979年 / 40卷

关键词：

D O I：

10.1051/jphyscol:1979616

中图分类号：

学科分类号：

摘要：

引用

页码：75 / 79

页数：5

共 12 条

[1] ABSENCE OF DISLOCATION-INDUCED LUMINESCENCE IN GAAS [J].

BOHM, K ;

GWINNER, D .

APPLIED PHYSICS, 1978, 17 (02) :155-157

[2] CATHODOLUMINESCENCE AND ELECTRICAL ANISOTROPY FROM ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN PLASTICALLY DEFORMED GALLIUM-ARSENIDE [J].

ESQUIVEL, AL ;

SEN, S ;

LIN, WN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2588-2603

[3] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

[4]

HIRTH JP, 1968, THEORY DISLOCATIONS, P353

[5]

KRAVCHEN.AF, 1968, SOV PHYS SEMICOND+, V1, P922

[6]

LABUSCH R, 1974, DISLOCATIONS COLLECT

[7]

LABUSCH R, 1975, I PHYS C SER, V23, P56

[8] EFFECTS OF HEAT-TREATMENT AND PLASTIC-DEFORMATION ON PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS=CR [J].

LIN, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5302-5304

[9] ENHANCED DEGRADATION AND DEEP-LEVEL FORMATION AT DISLOCATIONS IN GAAS0.6P0.4LEDS [J].

METZ, S .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :296-297

[10]

OBERG S, 1978, PHYS STATUS SOLI JUL

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