ENHANCED DEGRADATION AND DEEP-LEVEL FORMATION AT DISLOCATIONS IN GAAS0.6P0.4LEDS

被引：11

作者：

METZ, S ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS ELEKTR,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 06期

关键词：

D O I：

10.1063/1.89374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：296 / 297

页数：2

共 16 条

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[5] EVIDENCE FOR ROLE OF CERTAIN METALLURGICAL FLAWS IN ACCELERATING ELECTROLUMINESCENT DIODE DEGRADATION [J].

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[6] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

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[7] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX [J].

MADER, S ;

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ANGILELLO, J .

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[8] DISLOCATIONS IN GAAS1-XPX [J].

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[9]

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[10]

METZ S, 1976, 13 INT C PHYS SEM RO

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