PHOTOLUMINESCENCE OF GAAS GROWN DILUTELY DOPED WITH SI BY MOLECULAR-BEAM EPITAXY WITH MODULATED SOURCE SUPPLIES

被引：4

作者：

KAMIJOH, T

SUGIYAMA, N

KATAYAMA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1862 / 1864

页数：3

共 8 条

[1]

AHEN DJ, 1975, J PHYS CHEM SOLIDS, V36, P1041

[2] SHALLOW-ACCEPTOR ISOELECTRONIC-IMPURITY COMPLEXES IN GAAS [J].

BEYE, AC ;

GARCIA, JC ;

NEU, G ;

CONTOUR, JP ;

MASSIES, J .

SOLID STATE COMMUNICATIONS, 1988, 67 (12) :1239-1243

[3] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

YAMAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10) :L868-L870

[4] ELASTIC-SCATTERING OF EXCITON POLARITONS BY NEUTRAL IMPURITIES [J].

KOTELES, ES ;

LEE, J ;

SALERNO, JP ;

VASSELL, MO .

PHYSICAL REVIEW LETTERS, 1985, 55 (08) :867-870

[5]

Rossi J. A., 1970, Solid State Communications, V8, P2021, DOI 10.1016/0038-1098(70)90683-6

[6] CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

SKROMME, BJ ;

BOSE, SS ;

LOW, TS ;

LEPKOWSKI, TR ;

DEJULE, RY ;

STILLMAN, GE ;

HWANG, JCM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4685-4702

[7] ELECTRICAL AND OPTICAL-PROPERTIES OF SI DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (311) SUBSTRATES [J].

TAKAMORI, T ;

FUKUNAGA, T ;

KOBAYASHI, J ;

ISHIDA, K ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07) :1097-1101

[8] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

VINA, L ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :36-37

← 1 →